Fabricating high-density microarrays for retinal recording
Identifieur interne : 00D562 ( Main/Repository ); précédent : 00D561; suivant : 00D563Fabricating high-density microarrays for retinal recording
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Abstract
Understanding how the retina encodes the visual scene is a problem, which requires large area, high-density microelectrode arrays to solve. The correlated signals that emerge from the output (ganglion) cells of the retina form a code, which is not well understood. We use a combination of electron beam lithography, photolithography and dry-etch pattern transfer to realise a 519-electrode array in the transparent conductor indium tin oxide (ITO). The electrodes are spaced at 60 μm in a hexagonal close-packed geometry. A mix and match lithography procedure is utilised, whereby the high-density inner region is fabricated using electron beam lithography whilst the outer sections are realised by photolithography. Reactive ion etching (RIE), using CH4/H2, of the ITO forms the array structure and SF6 RIE allows resist removal and patterning of vias through a plasma deposited Si3N4 protective layer. The electrical properties of the ITO layer are unaffected by the etching procedures. A reliable method for achieving low-impedance electroplated platinum electrodes has been employed to yield electrode impedances of ∼20 kΩ. An array fabricated using these dry-etch techniques is shown to record action potentials from live retinal tissue in neurophysiological experiments.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Fabricating high-density microarrays for retinal recording</title><author><name sortKey="Mathieson, K" uniqKey="Mathieson K">K. Mathieson</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Glasgow</s1><s2>Glasgow G12 8QQ, Scotland</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Glasgow G12 8QQ, Scotland</wicri:noRegion></affiliation></author><author><name sortKey="Cunningham, W" uniqKey="Cunningham W">W. Cunningham</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Glasgow</s1><s2>Glasgow G12 8QQ, Scotland</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Glasgow G12 8QQ, Scotland</wicri:noRegion></affiliation></author><author><name sortKey="Marchal, J" uniqKey="Marchal J">J. Marchal</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Glasgow</s1><s2>Glasgow G12 8QQ, Scotland</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Glasgow G12 8QQ, Scotland</wicri:noRegion></affiliation></author><author><name sortKey="Melone, J" uniqKey="Melone J">J. Melone</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Glasgow</s1><s2>Glasgow G12 8QQ, Scotland</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Glasgow G12 8QQ, Scotland</wicri:noRegion></affiliation></author><author><name sortKey="Horn, M" uniqKey="Horn M">M. Horn</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Glasgow</s1><s2>Glasgow G12 8QQ, Scotland</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Glasgow G12 8QQ, Scotland</wicri:noRegion></affiliation></author><author><name sortKey="O Shea, V" uniqKey="O Shea V">V. O Shea</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Glasgow</s1><s2>Glasgow G12 8QQ, Scotland</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Glasgow G12 8QQ, Scotland</wicri:noRegion></affiliation></author><author><name sortKey="Smith, K M" uniqKey="Smith K">K. M. Smith</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Glasgow</s1><s2>Glasgow G12 8QQ, Scotland</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Glasgow G12 8QQ, Scotland</wicri:noRegion></affiliation></author><author><name sortKey="Litke, A" uniqKey="Litke A">A. Litke</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>SC1PP University of California Santa Cruz</s1><s2>Santa Cruz, CA 95604</s2><s3>USA</s3><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName></affiliation></author><author><name sortKey="Chichilnisky, E J" uniqKey="Chichilnisky E">E. J. Chichilnisky</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>The Salk Institute for Biological Studies</s1><s2>San Diego, CA 92037-1099</s2><s3>USA</s3><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>The Salk Institute for Biological Studies</wicri:noRegion></affiliation></author><author><name sortKey="Rahman, M" uniqKey="Rahman M">M. Rahman</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Glasgow</s1><s2>Glasgow G12 8QQ, Scotland</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Glasgow G12 8QQ, Scotland</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0343802</idno><date when="2003">2003</date><idno type="stanalyst">PASCAL 03-0343802 INIST</idno><idno type="RBID">Pascal:03-0343802</idno><idno type="wicri:Area/Main/Corpus">00CE28</idno><idno type="wicri:Area/Main/Repository">00D562</idno></publicationStmt><seriesStmt><idno type="ISSN">0167-9317</idno><title level="j" type="abbreviated">Microelectron. eng.</title><title level="j" type="main">Microelectronic engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Coding</term><term>Dry process</term><term>Electrical characteristic</term><term>Electron beam lithography</term><term>High density</term><term>ITO layers</term><term>Impedance</term><term>Microelectrode</term><term>Microelectronic fabrication</term><term>Patterning</term><term>Photolithography</term><term>Protective layer</term><term>Reactive ion etching</term><term>Resist</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Densité élevée</term><term>Microélectrode</term><term>Codage</term><term>Lithographie faisceau électron</term><term>Photolithographie</term><term>Formation motif</term><term>Gravure ionique réactive</term><term>Résist</term><term>Caractéristique électrique</term><term>Couche ITO</term><term>Impédance</term><term>Procédé voie sèche</term><term>Fabrication microélectronique</term><term>Couche protectrice</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Codage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Understanding how the retina encodes the visual scene is a problem, which requires large area, high-density microelectrode arrays to solve. The correlated signals that emerge from the output (ganglion) cells of the retina form a code, which is not well understood. We use a combination of electron beam lithography, photolithography and dry-etch pattern transfer to realise a 519-electrode array in the transparent conductor indium tin oxide (ITO). The electrodes are spaced at 60 μm in a hexagonal close-packed geometry. A mix and match lithography procedure is utilised, whereby the high-density inner region is fabricated using electron beam lithography whilst the outer sections are realised by photolithography. Reactive ion etching (RIE), using CH<sub>4</sub>/H<sub>2</sub>, of the ITO forms the array structure and SF<sub>6</sub> RIE allows resist removal and patterning of vias through a plasma deposited Si<sub>3</sub>N<sub>4</sub> protective layer. The electrical properties of the ITO layer are unaffected by the etching procedures. A reliable method for achieving low-impedance electroplated platinum electrodes has been employed to yield electrode impedances of ∼20 kΩ. An array fabricated using these dry-etch techniques is shown to record action potentials from live retinal tissue in neurophysiological experiments.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0167-9317</s0></fA01><fA02 i1="01"><s0>MIENEF</s0></fA02><fA03 i2="1"><s0>Microelectron. eng.</s0></fA03><fA05><s2>67-68</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Fabricating high-density microarrays for retinal recording</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 28th International Conference on Micro- and Nano-Engineering, September 16-19, 2002, Lugano, Switzerland</s1></fA09><fA11 i1="01" i2="1"><s1>MATHIESON (K.)</s1></fA11><fA11 i1="02" i2="1"><s1>CUNNINGHAM (W.)</s1></fA11><fA11 i1="03" i2="1"><s1>MARCHAL (J.)</s1></fA11><fA11 i1="04" i2="1"><s1>MELONE (J.)</s1></fA11><fA11 i1="05" i2="1"><s1>HORN (M.)</s1></fA11><fA11 i1="06" i2="1"><s1>O'SHEA (V.)</s1></fA11><fA11 i1="07" i2="1"><s1>SMITH (K. M.)</s1></fA11><fA11 i1="08" i2="1"><s1>LITKE (A.)</s1></fA11><fA11 i1="09" i2="1"><s1>CHICHILNISKY (E. J.)</s1></fA11><fA11 i1="10" i2="1"><s1>RAHMAN (M.)</s1></fA11><fA12 i1="01" i2="1"><s1>BRUGGER (J.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>GOBRECHT (J.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>ROTHUIZEN (H.)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>STAUFER (U.)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>VETTIGER (P.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Department of Physics and Astronomy, University of Glasgow</s1><s2>Glasgow G12 8QQ, Scotland</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="02"><s1>SC1PP University of California Santa Cruz</s1><s2>Santa Cruz, CA 95604</s2><s3>USA</s3><sZ>8 aut.</sZ></fA14><fA14 i1="03"><s1>The Salk Institute for Biological Studies</s1><s2>San Diego, CA 92037-1099</s2><s3>USA</s3><sZ>9 aut.</sZ></fA14><fA20><s1>520-527</s1></fA20><fA21><s1>2003</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>20003</s2><s5>354000111237840700</s5></fA43><fA44><s0>0000</s0><s1>© 2003 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>7 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>03-0343802</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Microelectronic engineering</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Understanding how the retina encodes the visual scene is a problem, which requires large area, high-density microelectrode arrays to solve. The correlated signals that emerge from the output (ganglion) cells of the retina form a code, which is not well understood. We use a combination of electron beam lithography, photolithography and dry-etch pattern transfer to realise a 519-electrode array in the transparent conductor indium tin oxide (ITO). The electrodes are spaced at 60 μm in a hexagonal close-packed geometry. A mix and match lithography procedure is utilised, whereby the high-density inner region is fabricated using electron beam lithography whilst the outer sections are realised by photolithography. Reactive ion etching (RIE), using CH<sub>4</sub>/H<sub>2</sub>, of the ITO forms the array structure and SF<sub>6</sub> RIE allows resist removal and patterning of vias through a plasma deposited Si<sub>3</sub>N<sub>4</sub> protective layer. The electrical properties of the ITO layer are unaffected by the etching procedures. A reliable method for achieving low-impedance electroplated platinum electrodes has been employed to yield electrode impedances of ∼20 kΩ. An array fabricated using these dry-etch techniques is shown to record action potentials from live retinal tissue in neurophysiological experiments.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F17</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Densité élevée</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>High density</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Densidad elevada</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Microélectrode</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Microelectrode</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Microeléctrodo</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Codage</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Coding</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Codificación</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Lithographie faisceau électron</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Electron beam lithography</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Litografía haz electrón</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Photolithographie</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Photolithography</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Fotolitografía</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Formation motif</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Patterning</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Formacíon motivo</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Gravure ionique réactive</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Reactive ion etching</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Grabado iónico reactivo</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Résist</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Resist</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Resistencia</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Caractéristique électrique</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Electrical characteristic</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Característica eléctrica</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Couche ITO</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>ITO layers</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Impédance</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Impedance</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Impedancia</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Procédé voie sèche</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Dry process</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Procedimiento vía seca</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Fabrication microélectronique</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Microelectronic fabrication</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Couche protectrice</s0><s5>22</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Protective layer</s0><s5>22</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Capa protectora</s0><s5>22</s5></fC03><fN21><s1>246</s1></fN21><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>MNE 2002 International Conference on Micro- and Nano-Engineering</s1><s2>28</s2><s3>Lugano CHE</s3><s4>2002-09-16</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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